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ZXMN6A25N8 60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60 RDS(on) () 0.050 @ VGS=10V 0.070 @ VGS=4.5V ID(A) 7.0
Description
This new generation Trench MOSFET from Zetex features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
D
Features
* * * *
Low on-resistance Fast switching speed Low gate drive SO8 package
G S
Applications
* * * *
DC-DC Converters Power management functions Disconnect switches Motor control
S S S G D D D D Top view
Ordering information
Device ZXMN6A25N8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500
Device marking
ZXMN6A25
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ZXMN6A25N8
Absolute maximum ratings
Parameter
Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25C @ VGS= 10V; TA=70C @ VGS= 10V; TA=25C @ VGS= 10V; TL=25C Pulsed Drain current
(c) (b) (b) (b) (a) (a)(d)
Symbol
VDSS VGS ID
Limit
60 20 5.7 4.5 4.3 7.0
Unit
V V A
IDM IS ISM PD PD PD Tj, Tstg
25.7 4.1 25.7 1.56 12.5 2.8 22.2 4.14 33.1 -55 to 150
A A A W mW/C W mW/C W mW/C C
Continuous Source current (Body diode) Pulsed Source current (Body diode) Power dissipation at TA =25C Linear derating factor Power dissipation at TA =25C Linear derating factor Power dissipation at TL =25C Linear derating factor
(a) (b) (d) (c)
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient Junction to ambient Junction to lead
NOTES:
(a) (b) (c) (d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Mounted on FR4 PCB measured at t 10 sec. Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us - pulse width limited by maximum junction temperature. Thermal resistance from junction to solder-point (at the end of the drain lead).
Symbol
(a) (b)
Value 80 45 30.2
Unit
C/W C/W C/W
RJA RJA RJL
(d)
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ZXMN6A25N8
Thermal characteristics
Max Power Dissipation (W)
ID Drain Current (A)
10 Limited 1
DC 1s 100ms 10ms 1ms 100s
RDS(on)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160
25mm x 25mm 1oz FR4
100m 10m 1m 100m
Single Pulse Tamb=25C
VDS Drain-Source Voltage (V)
1
10
Temperature (C)
Safe Operating Area
Derating Curve
Thermal Resistance (C/W)
80 70 60 50 40 30 20 10 0 100
Maximum Power (W)
T amb=25C
100
Single Pulse T amb=25C
D=0.5
10
D=0.2 D=0.1
Single Pulse D=0.05
1m
10m 100m
Pulse Width (s)
1
10
100
1k
1 100
1m
10m 100m
1
10
100
1k
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
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ZXMN6A25N8
Electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter Static
Drain-Source breakdown voltage Zero gate voltage drain current Gate-Body leakage Gate-Source threshold voltage Static Drain-Source () on-state resistance * Forward ( ) () Transconductance * Dynamic
()
Symbol
V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs
Min.
60
Typ.
Max.
Unit
V
Conditions
ID =250A, VGS=0V VDS=60V, VGS=0V VGS=20V, VDS=0V ID=250A, VDS=VGS VGS= 10V, ID= 3.6A VGS= 4.5V, ID= 3.0A VDS= 15V, ID= 4.5A
1.0 100 1 3 0.050 0.070 10.2
A nA V S
Input capacitance Output capacitance Reverse transfer capacitance Switching
() ()
Ciss Coss Crss
1063 104 64
pF pF pF VDS= 30V, VGS=0V f=1MHz
Turn-on-delay time Rise time Turn-off delay time Fall time Gate charge Total gate charge Gate-Source charge Gate-Drain charge Source-Drain diode Diode forward voltage Reverse recovery time
()
td(on) tr td(off) tf Qg Qg Qgs Qgd
3.8 4.0 26.2 10.6 11.0 20.4 4.1 5.1
ns ns ns ns nC nC nC nC VDS= 30V, VGS= 10V ID= 4.5A VDD= 30V, VGS= 10V ID= 1A RG 6.0, VDS= 30V, VGS= 5V ID= 4.5A
*
VSD trr Qrr
()
0.85 22.0 21.4
0.95
V ns nC
IS= 5.5A,VGS=0V IS= 2.2A,di/dt=100A/s
()
Reverse recovery charge
NOTES:
(*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. ()Switching characteristics are independent of operating junction temperature. ()For design aid only, not subject to production testing
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ZXMN6A25N8
Typical characteristics
T = 25C
10V
4.5V
T = 150C
10V
4.5V 4V 3.5V 3V 2.5V VGS 2V
ID Drain Current (A)
3.5V
1
3V
ID Drain Current (A)
10
4V
10
1
0.1
VGS 2.5V
0.1
0.01 0.1 1 10
0.01 0.1 1 10
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Output Characteristics
1.4 Normalised RDS(on) and VGS(th) 10
Output Characteristics
ID Drain Current (A)
1.2 1.0 0.8 0.6 0.4 -50
VGS = 10V ID = 4.5A RDS(on)
T = 150C
1
T = 25C
VGS(th) VGS = VDS ID = 250uA
0.1
VDS = 10V
0.01
VGS Gate-Source Voltage (V)
2
3
4
5
Tj Junction Temperature (C)
0
50
100
150
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance () 1000 100 10 1 0.1 0.01 0.01 0.1 1 10
2.5V VGS 3V 3.5V 4V 4.5V 10V T = 25C
Normalised Curves v Temperature
100 ISD Reverse Drain Current (A)
T = 150C
10
T = 25C
1
0.1
0.01 0.2
On-Resistance v Drain Current
ID Drain Current (A)
VSD Source-Drain Voltage (V)
0.4
0.6
0.8
1.0
1.2
Source-Drain Diode Forward Voltage
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ZXMN6A25N8
Typical characteristics
1600 1400
10
f = 1MHz
VGS Gate-Source Voltage (V)
VGS = 0V
ID = 4.5A
C Capacitance (pF)
1200 1000 800 600 400 200 0 0.1 1
CISS COSS
8 6 4 2
VDS = 30V
CRSS
VDS - Drain - Source Voltage (V)
10
0
0
5
10
15
20
25
Capacitance v Drain-Source Voltage
Q - Charge (nC) Gate-Source Voltage v Gate Charge
Test circuits
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ZXMN6A25N8
Package outline SO8
SO8 Package Information
DIM
Inches Min. Max. 0.069 0.010 0.197 0.244 0.157 0.050
Millimeters Min. 1.35 0.10 4.80 5.80 3.80 0.40 Max. 1.75 0.25 5.00 6.20 4.00 1.27
DIM
Inches Min. Max.
Millimeters Min. Max.
A A1 D H E L
0.053 0.004 0.189 0.228 0.150 0.016
e b c U h -
0.050 BSC 0.013 0.008 0 0.010 0.020 0.010 8 0.020 -
1.27 BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50 -
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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ZXMN6A25N8
Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview" Future device intended for production at some point. Samples may be available "Active" Product status recommended for new designs "Last time buy (LTB)" Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs" Device is still in production to support existing designs and production "Obsolete" Production has been discontinued Datasheet status key: "Draft version" This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version" This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue" This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Zetex sales offices Europe Zetex GmbH Kustermann-Park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
(c) 2008 Published by Zetex Semiconductors plc
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